发明名称 IN-SITU GROWTH OF ENGINEERED DEFECTS IN GRAPHENE BY EPITAXIAL REPRODUCTION
摘要 Engineered defects are reproduced in-situ with graphene via a combination of surface manipulation and epitaxial reproduction. A substrate surface that is lattice-matched to graphene is manipulated to create one or more non-planar features in the hexagonal crystal lattice. These non-planar features strain and asymmetrically distort the hexagonal crystal lattice of epitaxially deposited graphene to reproduce“in-situ”engineered defects with the graphene. These defects may be defects in the classic sense such as Stone-Wales defect pairs or blisters, ridges, ribbons and metacrystals. Nano or micron-scale structures such as planar waveguides, resonant cavities or electronic devices may be constructed from linear or closed arrays of these defects. Substrate manipulation and epitaxial reproduction allows for precise control of the number, density, arrangement and type of defects. The graphene may be removed and template reused to replicate the graphene and engineered defects. As such, expensive and time-consuming techniques can be justified to create the template. The capability to control the defect pattern in graphene enables the creation of structured devices such as waveguides, resonant cavities and electron devices in graphene.
申请公布号 US2012048181(A1) 申请公布日期 2012.03.01
申请号 US20100868566 申请日期 2010.08.25
申请人 BARKER DELMAR L.;ZELINSKI BRIAN J.;OWENS WILLIAM R.;RAYTHEON COMPANY 发明人 BARKER DELMAR L.;ZELINSKI BRIAN J.;OWENS WILLIAM R.
分类号 C30B25/20 主分类号 C30B25/20
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