发明名称 |
MEMORY CELL, METHODS OF MANUFACTURING MEMORY CELL, AND MEMORY DEVICE HAVING THE SAME |
摘要 |
A memory cell includes a selection transistor on a substrate and an antifuse on the substrate. The selection transistor includes a first gate connected to a read word line, a first gate insulation layer that insulates the first gate from the substrate, a first source region connected to a bit line, and a first drain region, an impurity concentration of the first drain region being lower than an impurity concentration of the first source region. The antifuse includes a first electrode connected to a program word line and a second electrode connected to the selection transistor.
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申请公布号 |
US2012051164(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201113219998 |
申请日期 |
2011.08.29 |
申请人 |
SON JONG-PIL;JANG SEONG-JIN;MOON BYUNG-SIK;KIM DOO-YOUNG;PARK JU-SEOP |
发明人 |
SON JONG-PIL;JANG SEONG-JIN;MOON BYUNG-SIK;KIM DOO-YOUNG;PARK JU-SEOP |
分类号 |
G11C29/04;G11C7/00;H01L21/336;H01L27/088 |
主分类号 |
G11C29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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