发明名称 |
COMPOUND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, POWER SUPPLY DEVICE AND HIGH-FREQUENCY AMPLIFIER |
摘要 |
A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end of the substrate opening; and a rear electrode made of a conductive material, disposed in the substrate opening so as to be connected to the local p-type region.
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申请公布号 |
US2012049955(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201113152421 |
申请日期 |
2011.06.03 |
申请人 |
MINOURA YUICHI;FUJITSU LIMITED |
发明人 |
MINOURA YUICHI |
分类号 |
H03F3/04;H01L21/335;H01L29/778;H02M7/06 |
主分类号 |
H03F3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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