摘要 |
Embodiments of the invention generally relate to an apparatus and a method for depositing materials, and more particularly to a vapor deposition chamber configured to deposit a material during a plasma-enhanced process. In one embodiment a chamber for processing one or more substrates is provided. The chamber body comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly. |
申请人 |
APPLIED MATERIALS, INC.;KAO, CHIEN-TEH;LAM, HYMAN W.H.;CHANG, MEI;OR, DAVID T.;DENNY, NICHOLAS R.;YUAN, XIAOXIONG (JOHN) |
发明人 |
KAO, CHIEN-TEH;LAM, HYMAN W.H.;CHANG, MEI;OR, DAVID T.;DENNY, NICHOLAS R.;YUAN, XIAOXIONG (JOHN) |