发明名称 |
Reduced Threshold Voltage-Width Dependency in Transistors Comprising High-K Metal Gate Electrode Structures |
摘要 |
Performance and/or uniformity of sophisticated transistors may be enhanced by incorporating a carbon species in the active regions of the transistors prior to forming complex high-k metal gate electrode structures. For example, a carbon species may be incorporated by ion implantation into the active region of a P-channel transistor and an N-channel transistor after selectively forming a threshold adjusted semiconductor material for the P-channel transistor, while the active region of the N-channel transistor is still masked. |
申请公布号 |
US2012049293(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201113186813 |
申请日期 |
2011.07.20 |
申请人 |
SCHEIPER THILO;HOENTSCHEL JAN;LANGDON STEVEN;GLOBALFOUNDRIES INC. |
发明人 |
SCHEIPER THILO;HOENTSCHEL JAN;LANGDON STEVEN |
分类号 |
H01L27/088;H01L21/8236;H01L21/8238 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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