| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide seed crystals which can produce a silicon carbide single crystal of high quality in which occurrence of a micropipe defect and screw dislocation is suppressed without increasing production time and production cost, a method for producing the seed crystals, and a method for producing a silicon carbide single crystal using the seed crystals. <P>SOLUTION: A seed crystal 1A and a seed crystal 1B are used for producing a single crystal 200, and each of them has a growth face 20a as a face from which the single crystal 200 starts to grow. The seed crystal 1A and the seed crystal 1B each have a substrate 10 made of a silicon carbide single crystal and a shielding film 20 having a growth face 20a. A substrate surface 10a is covered with the shielding film 20, and the half value width of the X-ray rocking curve of the shielding film 20 is ≤20 arc second. <P>COPYRIGHT: (C)2012,JPO&INPIT |
