发明名称 |
MEMORIES AND THEIR FORMATION |
摘要 |
Memories and their formation are disclosed. One such memory has first and second memory cells at a first vertical level of the memory, first and second memory cells at a second vertical level of the memory, a first data line is selectively coupled to the first memory cells at the first and second vertical levels, and a second data line over the first data line is selectively coupled to the second memory cells at the first and second vertical levels. |
申请公布号 |
WO2012003224(A3) |
申请公布日期 |
2012.03.01 |
申请号 |
WO2011US42392 |
申请日期 |
2011.06.29 |
申请人 |
MICRON TECHNOLOGY, INC.;TANG, SANH, D.;SINHA, NISHANT |
发明人 |
TANG, SANH, D.;SINHA, NISHANT |
分类号 |
G11C7/18;G11C16/02;H01L27/115 |
主分类号 |
G11C7/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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