发明名称 MEMORIES AND THEIR FORMATION
摘要 Memories and their formation are disclosed. One such memory has first and second memory cells at a first vertical level of the memory, first and second memory cells at a second vertical level of the memory, a first data line is selectively coupled to the first memory cells at the first and second vertical levels, and a second data line over the first data line is selectively coupled to the second memory cells at the first and second vertical levels.
申请公布号 WO2012003224(A3) 申请公布日期 2012.03.01
申请号 WO2011US42392 申请日期 2011.06.29
申请人 MICRON TECHNOLOGY, INC.;TANG, SANH, D.;SINHA, NISHANT 发明人 TANG, SANH, D.;SINHA, NISHANT
分类号 G11C7/18;G11C16/02;H01L27/115 主分类号 G11C7/18
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