| 摘要 |
<p>An organic silicon nitride-containing film, which can be used as a barrier film for gas barrier and semiconductor, an etching stopper film, a hard mask film and the like, is formed using a compound that is suitable for a CVD apparatus as a starting material. Provided are a gas barrier film and a semiconductor device, each of which uses the organic silicon nitride-containing film. A sealing film is formed by a chemical vapor deposition method using, as a starting material, an organic silicon nitride compound (for example, one of the compounds represented by general formulae (1)-(3)) which has a structure wherein at least one hydrogen atom is directly bonded to a silicon atom and at least one hydrogen atom is directly bonded to a nitrogen atom; and the thus-formed sealing film is used for a gas barrier member, an FPD device, a semiconductor device and the like.</p> |
