| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide means for reducing a peak current at which the current consumption temporarily increases when a semiconductor memory is accessed. <P>SOLUTION: A semiconductor memory 10 comprises a memory cell array 11 and a data mask control part 101. The data mask control part 101 outputs an internal mask signal for controlling data transfer between the memory cell array 11 and a data input/output contact terminal. The data mask control part 101 varies the logical value of a standby state of the internal mask signal according to a default mask signal input from the outside or internally generated. <P>COPYRIGHT: (C)2012,JPO&INPIT |
