| 摘要 |
A solid-state imaging device includes: pixels each including a hybrid photoelectric conversion portion and pixel transistors, wherein the hybrid photoelectric conversion portion includes a semiconductor layer having a p-n junction, a plurality of columnar or cylindrical hollow-shaped organic material layers disposed in the semiconductor layer, and a pair of electrodes disposed above and below the semiconductor layer and the organic material layers, wherein charges generated in the organic material layers through photoelectric conversion move inside the semiconductor layer so as to be guided to a charge accumulation region, and wherein the solid-state imaging device is configured as a back-illuminated type in which light is incident from a surface opposite to the surface on which the pixel transistors are formed.
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