ETCHING METHOD, SUBSTRATE PROCESSING METHOD, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT

摘要

A fluorocarbon layer is formed on a silicon substrate that is a substrate to be processed (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remaining fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflection film and a hard mask, reliability of processing can be improved, while reducing the cost.