发明名称 |
SYSTEM AND METHOD FOR DRYING SUBSTRATES |
摘要 |
A method for drying a wet semiconductor substrate includes the steps of immersing the substrate in a drying liquid in a drying chamber; removing the substrate from the drying liquid within the drying chamber; purging the drying chamber with inert gas; exposing the substrate to vacuum pressure within the drying chamber; and backfilling the drying chamber with the inert gas to substantially achieve atmospheric pressure. A system for drying a semiconductor substrate includes a drying chamber, a drying liquid reservoir in fluid communication with the drying chamber, a liquid pump, an inert gas supply in fluid communication with the drying chamber, and a vacuum pressure source in fluid communication with the drying chamber.
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申请公布号 |
WO2012027205(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
WO2011US48314 |
申请日期 |
2011.08.18 |
申请人 |
JST MANUFACTURING, INC.;CAMPION, DAVID;ZRNO, RYAN |
发明人 |
CAMPION, DAVID;ZRNO, RYAN |
分类号 |
H01L21/67;B08B3/08;H01L21/02 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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