发明名称 SYSTEM AND METHOD FOR DRYING SUBSTRATES
摘要 A method for drying a wet semiconductor substrate includes the steps of immersing the substrate in a drying liquid in a drying chamber; removing the substrate from the drying liquid within the drying chamber; purging the drying chamber with inert gas; exposing the substrate to vacuum pressure within the drying chamber; and backfilling the drying chamber with the inert gas to substantially achieve atmospheric pressure. A system for drying a semiconductor substrate includes a drying chamber, a drying liquid reservoir in fluid communication with the drying chamber, a liquid pump, an inert gas supply in fluid communication with the drying chamber, and a vacuum pressure source in fluid communication with the drying chamber.
申请公布号 WO2012027205(A1) 申请公布日期 2012.03.01
申请号 WO2011US48314 申请日期 2011.08.18
申请人 JST MANUFACTURING, INC.;CAMPION, DAVID;ZRNO, RYAN 发明人 CAMPION, DAVID;ZRNO, RYAN
分类号 H01L21/67;B08B3/08;H01L21/02 主分类号 H01L21/67
代理机构 代理人
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