发明名称 PATTERN FORMATION METHOD, NANOIMPRINT MOLD AND TRANSFER BASE FOR NANOIMPRINT
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern formation method ensuring the resin filling performance in the pattern of a mold and the mold releasability from a resin layer, and to provide a nanoimprint mold and a transfer base for nanoimprint each for use in nanoimprint transfer using the pattern formation method. <P>SOLUTION: A nanoimprint mold 1 comprises a substrate 2, a transfer shape part 3 located on one surface 2a of the substrate 2, and a wettability change layer 4 located at least on the transfer shape part 3. A decrease in contact angle to water due to irradiation with light of a first wavelength and an increase in contact angle to water due to irradiation with light of a second wavelength occur reversibly in the wettability change layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012044019(A) 申请公布日期 2012.03.01
申请号 JP20100184683 申请日期 2010.08.20
申请人 DAINIPPON PRINTING CO LTD 发明人 HIRABAYASHI MASASHI;ARITSUKA YUKI
分类号 H01L21/027;B29C33/38;B29C33/42;B29C59/02 主分类号 H01L21/027
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