发明名称 |
PATTERN FORMATION METHOD, NANOIMPRINT MOLD AND TRANSFER BASE FOR NANOIMPRINT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method ensuring the resin filling performance in the pattern of a mold and the mold releasability from a resin layer, and to provide a nanoimprint mold and a transfer base for nanoimprint each for use in nanoimprint transfer using the pattern formation method. <P>SOLUTION: A nanoimprint mold 1 comprises a substrate 2, a transfer shape part 3 located on one surface 2a of the substrate 2, and a wettability change layer 4 located at least on the transfer shape part 3. A decrease in contact angle to water due to irradiation with light of a first wavelength and an increase in contact angle to water due to irradiation with light of a second wavelength occur reversibly in the wettability change layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012044019(A) |
申请公布日期 |
2012.03.01 |
申请号 |
JP20100184683 |
申请日期 |
2010.08.20 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
HIRABAYASHI MASASHI;ARITSUKA YUKI |
分类号 |
H01L21/027;B29C33/38;B29C33/42;B29C59/02 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|