发明名称 DRIVING DEVICE OF SEMICONDUCTOR SWITCHING ELEMENT AND DRIVING METHOD OF SEMICONDUCTOR SWITCHING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a driving device that can turn on a semiconductor switching element for the same duration as an intended duty cycle even if a slope of a PWM signal is controlled. <P>SOLUTION: When a gate drive circuit 4 outputs a gate signal with a slope added to rising and falling edges of an input PWM signal, respectively, to a gate of an N-channel MOSFET 1, a duty cycle adjustment unit 3 detects a voltage signal supplied to a lamp 2 via the N-channel MOSFET 1, determines time (a) between the rising edge of the input signal and the rising edge of a voltage signal and time (b) between the falling edge of the PWM signal and the falling edge of the voltage signal, and outputs a driving signal with its duty cycle (z) set as z=(x+a-b) to the gate drive circuit 4. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012044514(A) 申请公布日期 2012.03.01
申请号 JP20100184922 申请日期 2010.08.20
申请人 DENSO CORP 发明人 KISHIMOTO KEIJI;TSUCHIDA MASAHIRO;UENO AKIHISA
分类号 H03K17/687 主分类号 H03K17/687
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