FORMATION METHOD OF DIFFUSION PREVENTION FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a formation method of a diffusion prevention film and a manufacturing method of a semiconductor device in which both prevention of variation in a threshold voltage due to diffusion of a threshold adjustment chemical element, etc. and simplification of a manufacturing process are achieved.

SOLUTION: The formation method of a diffusion prevention film includes: a process for performing a first heating treatment after introducing nitrogen to a high dielectric constant oxide film that does not contain Si; a process for depositing a semiconductor layer containing Si on the high dielectric constant oxide film being introduced with nitrogen and not containing Si; and a process for diffusing the Si in the semiconductor layer containing Si into the high dielectric constant oxide being introduced with nitrogen and not containing Si by a second heating treatment.

COPYRIGHT: (C)2012,JPO&INPIT