Formation of doped surface of plate-shaped wafer or semiconductor device involves applying phosphorus dopant source, forming primary doped surface, removing dopant source and crystallized precipitate, and forming secondary doped surface

摘要

A phosphorus dopant source is applied on a surface, and a primary doped surface is formed. The dopant source is removed, and a secondary doped surface with high depth with respect to primary doped surface is formed. After selectively removing primary dopant source, crystallized precipitates of silicon-phosphorus and silicon-phosphorus oxide are removed.