| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a control apparatus which can improve processing accuracy. <P>SOLUTION: According an embodiment, the control apparatus controls a plasma processing apparatus comprising an electrode provided in a processing chamber and on which a processing target substrate is loaded, a first power supply circuit for supplying power to the electrode, a plasma generation part for generating plasma in space in the processing chamber separated from the electrode, and a second power supply circuit for supplying power to the plasma generation part. The control apparatus comprises a detection part for detecting a parameter output form the first power supply circuit and a control part for controlling power supplied from the second power supply circuit such that the parameter detected by the detection part coincides with a target value. <P>COPYRIGHT: (C)2012,JPO&INPIT |
