发明名称 METHOD FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, DEVICE FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, METHOD FOR EVALUATING MEASUREMENT MEMBER, DEVICE FOR EVALUATING MEASUREMENT MEMBER, METHOD FOR DETECTING ANALYTE AND DEVICE FOR DETECTING ANALYTE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and device capable of measuring an electric field enhancement degree on a plane (in a plane direction) of a metallic thin film of a real target of measurement, and also obtaining three dimensional distribution of electric field enhancement degrees corresponding to thickness of the metallic thin film and a height position of an analyte captured in a vicinity of the metallic thin film so as to measure (or estimate) an accurate electric field enhancement degree. <P>SOLUTION: In the method and device, a first excitation light is irradiated from a light source to generate a surface plasmon light on a surface of a metallic thin film, and a second excitation light which is different from the first excitation light is irradiated toward the metallic thin film to generate a second light on the surface of the metallic thin film, so that an interference pattern is formed by the surface plasmon light and the second light, and while changing a light volume of the second excitation light, based on the light volume of the second excitation light when contrast of the interference pattern becomes strongest, an electric field enhancement degree at a predetermined height position of an electric field enhancement degree measurement member is converted for estimation. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012042234(A) 申请公布日期 2012.03.01
申请号 JP20100181365 申请日期 2010.08.13
申请人 KONICA MINOLTA HOLDINGS INC 发明人 NAKAMURA YUKITO;KAYA TAKATOSHI;MATSUO MASAKI;NISHIKAWA KUMIKO
分类号 G01N21/27;G01N21/45;G01N21/64 主分类号 G01N21/27
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