| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method and chemical vapor deposition device capable of forming carbon nanotube for a short period of time even when a substrate has a large area. <P>SOLUTION: A head 30 relatively small with respect to the substrate W is relatively moved in the predetermined direction at the predetermined speed. The head 30 is provided with a reduction chamber 40 for supplying reducing gas to the substrate W, and a carbon source chamber 50 for supplying carbon source gas. The reduction chamber 40 is provided at a front stage side rather than the carbon source chamber 50 along the relative movement direction of the head 30 with respect to the substrate W. When a catalyst arranged on a surface of the substrate W is opposed to the reduction chamber 40 or the carbon source chamber 50, reduction treatment or deposition treatment of the carbon nanotube is performed by heating the catalyst. Even when the substrate W has a large area, atmosphere substitution of the reduction chamber 40 and the carbon source chamber 50 does not take long time, and thus, the carbon nanotube can be formed for a short period of time. <P>COPYRIGHT: (C)2012,JPO&INPIT |
