发明名称 |
Gate Electrodes of a Semiconductor Device Formed by a Hard Mask and Double Exposure in Combination with a Shrink Spacer |
摘要 |
When forming complex gate electrode structures, a double exposure double etch strategy may be applied, in which the lateral distance in the width direction of the gate electrode structures may be defined prior to forming mask features for defining the gate length. In this case, the width dimension of the mask opening may be adjusted on the basis of a spacer element, which may thus allow providing a reduced dimension on the basis of well-established process techniques. |
申请公布号 |
US2012049286(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201113187795 |
申请日期 |
2011.07.21 |
申请人 |
BEYER SVEN;HELLMICH ANDREAS;LAUFER STEFFEN;GEBAUER KLAUS;GLOBALFOUNDRIES INC. |
发明人 |
BEYER SVEN;HELLMICH ANDREAS;LAUFER STEFFEN;GEBAUER KLAUS |
分类号 |
H01L21/76;B82Y40/00;B82Y99/00;H01L21/28;H01L27/088 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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