发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A compound semiconductor device includes a substrate; a compound semiconductor layer formed over the substrate; and a gate electrode formed over the compound semiconductor layer with a gate insulating film arranged therebetween. The gate insulating film includes a first layer having reverse spontaneous polarization, the direction of which is opposite to spontaneous polarization of the compound semiconductor layer. |
申请公布号 |
US2012049180(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201113096187 |
申请日期 |
2011.04.28 |
申请人 |
YAMADA ATSUSHI;FUJITSU LIMITED |
发明人 |
YAMADA ATSUSHI |
分类号 |
H01L29/22;H01L21/335;H01L21/44;H01L27/06;H01L29/20;H01L29/78 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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