| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide sintered compact, with which a silicon carbide sintered compact having excellent resistance characteristics in a wide temperature range extending from low temperature to high temperature can be produced, and to provide the silicon carbide sintered compact. <P>SOLUTION: The method for producing the silicon carbide sintered compact includes: a raw material mixing step to prepare raw material powder formed by mixing silicon carbide, and an aluminum raw material including aluminum; and a sintering step to sinter the raw material powder in an atmosphere composed of nitrogen and argon. Also the silicon carbide sintered compact is formed by applying a production method described in any of claims 1-6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
