发明名称 MEMORY ARRAY WITH AN AIR GAP BETWEEN MEMORY CELLS AND THE FORMATION THEREOF
摘要 Memory arrays and their formation are disclosed. One such memory array has first and second memory cells over a semiconductor, an air gap between the first and second memory cells, and an isolation region within the semiconductor and under the air gap so that the isolation region is aligned with the air gap.
申请公布号 US2012049245(A1) 申请公布日期 2012.03.01
申请号 US20100862107 申请日期 2010.08.24
申请人 BICKSLER ANDREW;LARSEN CHRIS;MICRON TECHNOLOGY, INC. 发明人 BICKSLER ANDREW;LARSEN CHRIS
分类号 H01L27/115;H01L21/8229 主分类号 H01L27/115
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