发明名称 |
MEMORY ARRAY WITH AN AIR GAP BETWEEN MEMORY CELLS AND THE FORMATION THEREOF |
摘要 |
Memory arrays and their formation are disclosed. One such memory array has first and second memory cells over a semiconductor, an air gap between the first and second memory cells, and an isolation region within the semiconductor and under the air gap so that the isolation region is aligned with the air gap.
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申请公布号 |
US2012049245(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US20100862107 |
申请日期 |
2010.08.24 |
申请人 |
BICKSLER ANDREW;LARSEN CHRIS;MICRON TECHNOLOGY, INC. |
发明人 |
BICKSLER ANDREW;LARSEN CHRIS |
分类号 |
H01L27/115;H01L21/8229 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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