发明名称 BULK ACOUSTIC WAVE RESONATOR STRUCTURE, A MANUFACTURING METHOD THEREOF, AND A DUPLEXER USING THE SAME
摘要 A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode. A first electrode portion may include a third air cavity formed on a bottom surface of either the lower electrode or the upper electrode connecting between the first lamination resonating portion and the second lamination resonating portion.
申请公布号 US2012049976(A1) 申请公布日期 2012.03.01
申请号 US201113088905 申请日期 2011.04.18
申请人 SON SANG UK;SONG IN SANG;KIM YOUNG IL;KIM DUCK HWAN;KIM CHUL SOO;SHIN JEA SHIK;KIM HYUNG RAK;LEE JAE CHUN;SAMSUNG ELECTRONICS CO., LTD. 发明人 SON SANG UK;SONG IN SANG;KIM YOUNG IL;KIM DUCK HWAN;KIM CHUL SOO;SHIN JEA SHIK;KIM HYUNG RAK;LEE JAE CHUN
分类号 H03H9/70;H01L41/047;H03H3/02 主分类号 H03H9/70
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