发明名称 |
SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS |
摘要 |
The embodiments of methods of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate described above enable reducing cross-talk (or blooming) of neighboring. The methods use an oxide implant mask to form a deep doped region and also to form a shallow doped region. In some embodiments, the shallow doped regions are narrower and are formed by depositing a conformal dielectric layer over the oxide implant mask to narrow the openings for implantation.
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申请公布号 |
US2012052652(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US20100871032 |
申请日期 |
2010.08.30 |
申请人 |
FU SHIH-CHI;TZENG KAI;LU WEN-CHEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FU SHIH-CHI;TZENG KAI;LU WEN-CHEN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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