| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an amorphous carbon semiconductor capable of simplifying manufacturing processes compared with conventional ones, a method for manufacturing the amorphous carbon semiconductor, a photoelectric conversion element using the amorphous carbon semiconductor, and a method for manufacturing the photoelectric conversion element. <P>SOLUTION: The method for manufacturing the amorphous carbon semiconductor and the photoelectric conversion element comprises a step for supplying a radical generated by irradiating gas with a high frequency wave, and a heated fullerene to a vacuum deposition chamber; and a step for film-forming the amorphous carbon semiconductor through a step for reacting the radical with the fullerene supplied to the vacuum deposition chamber. The amorphous carbon semiconductor contains a material derived from the fullerene generated by breaking the fullerene structure, and the fullerene, and the photoelectric conversion element uses the amorphous carbon semiconductor as a p-type layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
