| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having a collectively processed three-dimensional multilayer memory structure with increased storage capacity and to provide a manufacturing method of the same. <P>SOLUTION: The nonvolatile semiconductor storage device of an embodiment comprises a first and a second multilayer structures ML1, ML2, a first and a second semiconductor pillars SP1, SP2, a semiconductor connection part CP, a frist and a second connection conductive layers BGa, BGb, a first and a second pillar storage layers, and a first and a second connection storage layers. The multilayer structure includes a plurality of electrode films 61 and a plurality of interelectrode insulator films 62, and the both films are laminated alternately one by one. The semiconductor pillar penetrates the multilayer structure. The semiconductor connection part connects one ends of the first and the second semiconductor pillars. The connection conductive layer faces the semiconductor connection part. The pillar storage layer is provided between the electrode film and the semiconductor pillar. The connection storage layer is provided between the connection conductive layer and the semiconductor connection part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
