发明名称 SAMPLE POTENTIAL INFORMATION DETECTION METHOD AND CHARGED PARTICLE BEAM DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and a device each detecting a compensation value of changes of device condition to be changed by potential measurement on a surface of a sample by using charged particle beams or sample charging, while suppressing potential changes of the sample induced by irradiation of the charged particle beams. <P>SOLUTION: For achieving above purposes, each of a method and a device applies, in a state in which charged particle beams are applied onto a sample, voltage to the sample so as to get a state (hereinafter referred to as a mirror state) in which the charged particle beams do not reach the sample, and detects information about the sample potential by using signals obtained at that time. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012043816(A) 申请公布日期 2012.03.01
申请号 JP20110264205 申请日期 2011.12.02
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 YAMAZAKI MINORU;IKEGAMI AKIRA;KAZUMI HIDEYUKI;NASU OSAMU
分类号 H01J37/29;H01J37/20;H01J37/28 主分类号 H01J37/29
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