| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device allowing mass production at a low cost and downsizing to the same extent as a semiconductor light-emitting device. <P>SOLUTION: An optical semiconductor device comprises: a light-emitting layer 2 including a stack of semiconductor layers separated from a substrate after being epitaxially grown on the substrate; first and second electrodes 7 formed on a second primary surface of the light-emitting layer; a light-transmitting layer 5 provided on a first primary surface; a fluorescent layer 4 provided on the light-transmitting layer; first and second metal posts 8 provided on the first and second electrodes; and a sealing layer 10 that is provided on the second primary surface, is formed from a material having light shielding properties against the light emitted from the light-emitting layer, seals the first and second metal posts, and covers the side surfaces of the light-emitting layer. The side surfaces of the light-transmitting layer has a portion that is not covered with the fluorescent layer and the sealing layer. A part of the light emitted from the light-emitting layer undergoes wavelength conversion in the fluorescent layer and can be emitted to the outside, and the other part of the light can be emitted to the outside from the side surfaces of the light-transmitting layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
