| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for determining an exposure correction amount capable of forming a pattern of a desired dimension on a substrate. <P>SOLUTION: According to one embodiment of the invention, the method for determining the exposure correction amount includes a step of calculating a dimension during correction and a step of determining the exposure correction amount. When a mask pattern having at least two or more types of pattern pitches arranged in an exposure shot is transferred to the substrate per exposure correction amount using a plurality of types of exposure correction amounts, the step of calculating the dimension during correction calculates each dimension deviation amount from an ideal value of an on-substrate pattern formed on the substrate the per exposure correction amount as distribution in a shot in the exposure shot. The step of determining the exposure correction amount determines distribution in a shot for the exposure correction amount to be applied to the exposure shot based on the each dimension deviation amount. <P>COPYRIGHT: (C)2012,JPO&INPIT |
