| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing agent for a silicon oxide capable of polishing a silicon oxide film on a poly-silicon film at high speed and suppressing polish proceeds of the poly-silicon film when the poly-silicon film is exposed, in the method for manufacturing a semiconductor device, and the polishing method using the polishing agent. <P>SOLUTION: The polishing agent for polishing the silicon oxide film on the poly-silicon contains abrasive grains, poly-silicon polishing retarder and water. It is preferred that either of (1) water-soluble polymer having a skeleton of either of an N-mono-substituted compound and an N,N-di-substituted compound of any of the group consisting of acrylamide, methacrylamide and an alpha-substituted compound thereof; (2) polyethylene glycol; (3) acetylene diol oxyethylene adduct; (4) water-soluble organic compound having acetylenic linkage; and (5) alkoxylated linear aliphatic alcohol or (6) copolymer containing polyvinylpyrrolidone or pyrrolidone is used as the polishing retarder. <P>COPYRIGHT: (C)2012,JPO&INPIT |
