| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a low height type cooling structure which can directly radiate the heat from a surface of the semiconductor device with high efficiency, separates a vapor flow passage from a liquid passage, and shortens a flowing distance in a porous body. <P>SOLUTION: A porous film 7 is directly formed on a back surface of a semiconductor device 3 mounted on a circuit board 2 by using such as a fine particle jetting method, namely a gas deposition method to form a sealed space 13 which has the porous film 7 and one side configured of the circuit boad. A wall surface opening part 9 of the sealed space and other wall surface opening part 10 are connected each other via a tube 11 to form a sealed cyclic path. A coolant in the porous film vaporizes at high temperature caused by the semiconductor device, separates from the porous film, enters into the tube from the wall surface opening part, circulates in the tube, cools and liquefies. The liquefied coolant passes thorough the tube and drops from other wall surface opening on the porous film. The dropped coolant moves in the porous film by capillary force and vaporizes due to heat of the semiconductor device again. The vaporized latent heat cools the semiconductor device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
