发明名称 |
PATTERN MEASUREMENT APPARATUS |
摘要 |
It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure. |
申请公布号 |
US2012053892(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201013202504 |
申请日期 |
2010.02.03 |
申请人 |
MATSUOKA RYOICHI;SUGIYAMA AKIYUKI;TOYOTA YASUTAKA;HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
MATSUOKA RYOICHI;SUGIYAMA AKIYUKI;TOYOTA YASUTAKA |
分类号 |
G01B15/04;G06F15/00;H01L21/027 |
主分类号 |
G01B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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