| 摘要 |
<p>Provided is a reflective mask blank for EUV lithography, which is provided with an absorber layer having an optical constant suitable for reducing the thickness. A reflecting layer that reflects EUV light, and an absorber layer that absorbs EUV light are formed in this order on a substrate in the reflective mask blank for EUV lithography. The mask blank is characterized in that the absorber layer contains tantalum (Ta) and palladium (Pd), and that in the absorber layer, the content rate of the tantalum (Ta) is 10-80 at%, the content rate of the palladium (Pd) is 20-90 at%, and the total content rate of the Ta and the Pd is 95-100 at%.</p> |
