| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with improved breakdown voltage, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises a first semiconductor region, second semiconductor regions, third semiconductor regions, fourth semiconductor regions, gate regions, gate insulating films, and electric-field relaxation regions. The first semiconductor region of a first conductive type includes a first portion and a second portion extending along a first direction. Each of the second semiconductor regions of the first conductive type includes a third portion on the first portion and a fourth portion adjacent to the second portion. Each of the third semiconductor regions of a second conductive type includes a fifth portion on the third portion and a sixth portion adjacent to the fourth portion. Each of the fourth semiconductor regions of the first conductive type is adjacent to the sixth portion on the fifth portion. Each of the gate regions is provided in a trench penetrating through the second semiconductor region, the third semiconductor region, and the fourth semiconductor region in a second direction. Each of the gate insulating films is provided between an inner wall of the trench and the gate region. Each of the electric-field relaxation regions of the second conductive type is provided between the third portion and the fifth portion and has a lower impurity concentration than the third semiconductor region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
