| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device which can improve a yield of switching. <P>SOLUTION: The nonvolatile storage device according to an embodiment comprises a lower electrode film BE, an upper electrode film TE, and a resistance change layer RW sandwiched between the lower electrode film BE and the upper electrode film TE. The resistance change layer RW is made of an amorphous film including N, and includes Si and C as main components, which can reversibly change the resistive state among a plurality of different resistive states by an electrical signal flowing from the upper electrode film TE side to the lower electrode film BE side. The upper electrode film TE includes a material having nitrogen concentration lower than that of the lower electrode film BE. <P>COPYRIGHT: (C)2012,JPO&INPIT |
