| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film, or a dielectric material having R-Ge-Ti-O where R is selected from Zr and Hf, and to provide a manufacturing method thereof. <P>SOLUTION: There is provided the dielectric material having a film of R-Ge-Ti-O where R is selected from Zr and Hf, and the manufacturing method thereof. The dielectric material preferably has a formula of R<SB POS="POST">x</SB>-Ge<SB POS="POST">y</SB>-Ti<SB POS="POST">z</SB>-O<SB POS="POST">w</SB>, where 0.05≥x≤1, 0.05≤y≤1, 0.1≥z≤1, 1≥w≤2, and x+y+z≡1, and more preferably 0.15≥x≤0.7, 0.05≥y≤0.3, 0.25≥z≤0.7, 1.95≥w≤2.05, and x+y+z≡1. The dielectric material is especially useful for usage by a silicon chip integrated circuit device having capacitors of a dynamic random access memory (DRAM) device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
