发明名称 SUBSTRATE VIAS FOR HEAT REMOVAL FROM SEMICONDUCTOR DIE
摘要 A substrate comprising a plurality of layers, a first side and a second side; and a via extending through the substrate from the first side to the second side. The via comprises: a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area; a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via; a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area; and a second thermal and electrical contact pad disposed under the second dielectric layer, wherein the second contact pad physically contacts the second substrate via.
申请公布号 US2012049345(A1) 申请公布日期 2012.03.01
申请号 US20100869844 申请日期 2010.08.27
申请人 RAILKAR TARAK A.;ALAWANI ASHISH;PARKHURST RAY;AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. 发明人 RAILKAR TARAK A.;ALAWANI ASHISH;PARKHURST RAY
分类号 H01L23/48 主分类号 H01L23/48
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