发明名称 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS
摘要 A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.
申请公布号 US2012052685(A1) 申请公布日期 2012.03.01
申请号 US201113205262 申请日期 2011.08.08
申请人 OGIHARA TSUTOMU;UEDA TAKAFUMI;YANO TOSHIHARU;HASEGAWA KOJI;SHIN-ETSU CHEMICAL CO., LTD. 发明人 OGIHARA TSUTOMU;UEDA TAKAFUMI;YANO TOSHIHARU;HASEGAWA KOJI
分类号 H01L21/311;G03F7/00;G03F7/11 主分类号 H01L21/311
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