发明名称 |
SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS |
摘要 |
A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent. |
申请公布号 |
US2012052685(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201113205262 |
申请日期 |
2011.08.08 |
申请人 |
OGIHARA TSUTOMU;UEDA TAKAFUMI;YANO TOSHIHARU;HASEGAWA KOJI;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA TSUTOMU;UEDA TAKAFUMI;YANO TOSHIHARU;HASEGAWA KOJI |
分类号 |
H01L21/311;G03F7/00;G03F7/11 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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