| 摘要 |
The invention provides a process for producing polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen by means of one or more nozzles into a reactor including at least one heated filament rod on which silicon is deposited, wherein an Archimedes number Arn which describes flow conditions in the reactor, as a function of the fill level FL which states the ratio of one rod volume to one empty reactor volume in percent, for a fill level FL of up to 5% is within the range limited at the lower end by the function Ar=2000×FL−0.6 and at the upper end by the function Ar=17 000×FL0.9, and at a fill level of greater than 5% is within a range from at least 750 to at most 4000. |
