DRIVE METHOD FOR MEMORY ELEMENT AND STORAGE DEVICE USING MEMORY ELEMENT

摘要

In order to carry out switching operations with greater stability this drive method for a memory element (10) is characterised by applying current pulses to the memory element, by means of a constant current circuit, when switching from a high resistance state to a low resistance state. The memory element (10) is provided with: an insulating substrate (1); a first electrode (2) and a second electrode (3), which are provided on the insulating substrate; and an inter-electrode gap unit (4) which is provided between the first electrode and the second electrode, and which has nanometre-order gaps wherein a change in the resistance between the first and the second electrodes occurs. The memory element is capable of switching from a prescribed low resistance state to a prescribed high resistance state, and from a high resistance state to a low resistance state.