发明名称 Array structure for charged particle beam exposure apparatus and device manufacturing method
摘要 This invention provides a reliable blanking aperture array. An insulating layer and conductive layer are sequentially formed on the lower surface of a substrate. Then, a plurality of pairs of opposing trenches are formed in the substrate, and an insulating layer is formed on each of the side surfaces of the trenches by thermal oxidation. The conductive layer is exposed by etching the bottom of each trench. A conductive member is selectively grown in each trench using the conductive layer as a plating electrode to form a blanking electrode. An opening is formed between the opposing blanking electrodes.
申请公布号 EP1355192(B1) 申请公布日期 2012.02.29
申请号 EP20030252185 申请日期 2003.04.07
申请人 CANON KABUSHIKI KAISHA;HITACHI, LTD. 发明人 TAMAMORI, KENJI;MURAKI, MASATO;IWASAKI, YUICHI;NAKAYAMA, YOSHINORI;ASANO, KOUJI;MORO, YOSHIAKI;ESASHI, MASAYOSHI
分类号 G03F7/20;H01J37/04;H01J37/317 主分类号 G03F7/20
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