METHOD FOR PREPARING A GERMANIUM LAYER FROM AN SILICON-GERMANIUM ON-INSULATOR SUBSTRATE,申请号EP20080716770-传众专利搜索

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发明名称	METHOD FOR PREPARING A GERMANIUM LAYER FROM AN SILICON-GERMANIUM ON-INSULATOR SUBSTRATE
摘要
申请公布号	EP2109884(B1)	申请公布日期	2012.02.29
申请号	EP20080716770	申请日期	2008.02.07
申请人	COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;STMICROELECTRONICS (CROLLES 2) SAS	发明人	VINCENT, BENJAMIN;DAMLENCOURT, JEAN-FRANCOIS;MORAND, YVES
分类号	H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
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