发明名称 RF-PLASMA GLOW DISCHARGE SPUTTERING
摘要 <p>RF plasma glow discharge apparatus and method for pulsed plasma sputtering. The apparatus and method comprise means to pulse the power at a sputter target 102 and an RF antenna 100 so as to create a peak power density at the RF antenna 100 of greater than 50 Wcm-2. A plasma of highly ionised sputtered species is generated with or without a magnetic field. Sputter species include metallic, non-magnetic, ceramic and oxide materials that may be used for substrate etching and deposition. Consideration is also given to plasma and target power supply impedance so as to optimise the intensity of generated plasma species. Synchronisation of the power pulses at the target 107 and RF antenna 108 is also disclosed.</p>
申请公布号 EP2422352(A1) 申请公布日期 2012.02.29
申请号 EP20100719043 申请日期 2010.04.20
申请人 SHEFFIELD HALLAM UNIVERSITY 发明人 EHIASARIAN, ARUTIUN;HOVSEPIAN, PAPKEN;YUKIMURA, KEN
分类号 H01J37/32;H01J37/34 主分类号 H01J37/32
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