发明名称 |
PHASE CHANGE CURRENT DENSITY CONTROL STRUCTURE |
摘要 |
A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers. |
申请公布号 |
EP1969649(B1) |
申请公布日期 |
2012.02.29 |
申请号 |
EP20060845194 |
申请日期 |
2006.12.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DALEY, JON;CAMPBELL, KRISTY, A. |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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