| 摘要 |
PURPOSE: A nitride based light emitting device is provided to simplify a manufacturing process by using a nitride semiconductor thick film without using a proxy substrate. CONSTITUTION: A nitride based semiconductor layer includes a first surface and a second surface. An uneven structure(21) is located on the first surface. A first electrode is located on the uneven structure. A light extraction layer is located on the second surface. A second electrode is located on the light extracting layer. A protection layer(60) is located on one side of the nitride based semiconductor layer. |
