发明名称 IMPROVED SILICON THIN FILM DEPOSITION FOR PHOTOVOLTAIC DEVICE APPLICATIONS
摘要 The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi-junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as “value-added” products.
申请公布号 KR20120018146(A) 申请公布日期 2012.02.29
申请号 KR20117026406 申请日期 2010.04.07
申请人 AGC FLAT GLASS NORTH AMERICA, INC.;ASAHI GLASS COMPANY LTD. 发明人 CORDING CHRISTOPHER R.;SPENCER MATTHEW;MASUMO KUNIO
分类号 H01L31/042;H01L31/075;H01L31/18 主分类号 H01L31/042
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