发明名称 |
IMPROVED SILICON THIN FILM DEPOSITION FOR PHOTOVOLTAIC DEVICE APPLICATIONS |
摘要 |
The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi-junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as “value-added” products. |
申请公布号 |
KR20120018146(A) |
申请公布日期 |
2012.02.29 |
申请号 |
KR20117026406 |
申请日期 |
2010.04.07 |
申请人 |
AGC FLAT GLASS NORTH AMERICA, INC.;ASAHI GLASS COMPANY LTD. |
发明人 |
CORDING CHRISTOPHER R.;SPENCER MATTHEW;MASUMO KUNIO |
分类号 |
H01L31/042;H01L31/075;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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