| 摘要 |
PURPOSE:To obtain an excellent image having no deflection by a method wherein the channel region is deposited on the semiconductor substrate, which is turned into the drain, the SIT is constituted by providing the source and the gate in the channel region, the photo diode is provided being made to distance from the gate, the transfer gate is formed between the photo diode and the gate and the regions other than the region of the diode are covered with a light-shielding film. CONSTITUTION:An N<-> type layer 12, wherein channels are constituted, is made to epitaxially grow on an N<+> type Si substrate 11, which is turned into the drain, and the SIT is constituted by forming by diffusion a P<+> type gate 13 and an N<+> type source 16 in parts of the surface layer of the layer 12. Then, a P<+> type photo diode 14 and a P<+> type overflow drain 15 are provided at a region, where is located on the side of the source 16 and a region, where is located on the opposite side to the gate 13, and the whole surface is covered with an SiO2 film 17. After that, a gate capacitor electrode 18, which corresponds to the gate 13; a transfer gate electrode 19, which is located between the diode 14 and the gate 13; and an overflow electrode 20, which is located between the diode 14 and the drain 15; are respectively mounted and the regions other than the region of the diode 14 are covered with a light-shielding film 21 of Al. By such a way, all the picture elements can be imaged at the same timing. |
