发明名称 Halftone phase shift mask, blank for the same, and methods of manufacturing these
摘要 A quartz glass substrate (10) is placed in a DC or RF sputtering apparatus containing argon gas or oxygen gas. A zirconium compound target is reactively sputtered to form at least one halftone film (12) made of a zirconium compound target on the substrate, thereby forming a blank for a halftone phase shift mask. The refractive index, the extinction coefficient, and the film thickness of the halftone film are so determined that the transmittance and the reflectance to exposure light are 2 to 15% and 30% or less, respectively, and the transmittance to inspection light is 30% or less. Examples of the zirconium compound are zirconium oxide, zirconium nitride, zirconium oxynitride, zirconium oxycarbide, zirconium carbonitride, zirconium halide, zirconium halide oxide, zirconium halide nitride, zirconium oxide silicide, zirconium nitride silicide, zirconium oxynitride silicide, zirconium oxycarbide silicide, zirconium carbonitride silicide, zirconium halide silicide, zirconium halide oxide silicide, and zirconium halide nitride silicide. <IMAGE> <IMAGE> <IMAGE>
申请公布号 EP0838726(B1) 申请公布日期 2012.02.29
申请号 EP19970118464 申请日期 1997.10.23
申请人 TOPPAN PRINTING CO., LTD. 发明人 OKUBO, KINJI;MATSUO, TADASHI;HARAGUCHI, TAKASHI
分类号 G03F1/00 主分类号 G03F1/00
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