发明名称 |
APPARATUSES FOR ATOMIC LAYER DEPOSITION |
摘要 |
<p>Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.</p> |
申请公布号 |
EP2304774(A4) |
申请公布日期 |
2012.02.29 |
申请号 |
EP20090774542 |
申请日期 |
2009.07.02 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LAM, HYMAN;ZHENG, BO;HUA, AI;JACKSON, MICHAEL;YUAN, XIAOXIONG;WANG, HOU, GONG;UMOTOY, SALVADOR, P.;YU, SAN, HO |
分类号 |
H01L21/205;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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